1N, datasheet for 1N – SILICON 3-LAYER BILATERAL TRIGGERS provided by New Jersey Semi-Conductor Products, Inc.. 1N pdf. 1NA,AA. Leakage Current. IBeth Direction!). (Applied Voltage • 14 Voml NJ Semi-Conductors encourages customers to verify that datasheets are . 1N Datasheet: Silicon 3-Layer Bilateral Triggers, 1N PDF Download New Jersey Semiconductor, 1N Datasheet PDF, Pinouts, Data Sheet.
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TABLE 2 Theses devices are designed to use on applications where good Hpg linearity and low noise caracteristics are required: The speed, approximately 30 kHz, is slower than the transistor type but the transfer ratio can be as much as twenty times as high as 1n5670 single transistor type. Programmable control register provides variable word lengths, clock division ratios, transmit control, receive control, and interrupt control.
Available in high reliability glass construction or economic plastic packaging. The selection tables are arranged to highlight the prime selection criteria in easy- to-use order. Improved DC volume control. R 1NA 1N 1N MPF – Low cost.
R 1N 1N Programmable control for variable word ratasheet, synchronization, and interrupt. This selector guide, therefore, ignores the large bulk of general-purpose, small-signal type numbers and concentrates on those transistors that have emerged as the best values in various applications categories.
ROMs are also available to provide the rhythm patterns for electronic organs. Darlington devices are not only a very high gain alternative; other significant advantages include: Many of the devices are referred by section and page number to more comprehensive tables in this book. AP ara tradamarks of Motorola Inc. Higher voltages are available upon request, but a necessary trade-off against switching speeds results.
1N NTE Equivalent NTE DIODE – DIAC 28V+-4V – Wholesale Electronics
Developed to suppress transients in the automotive system, this datashee operates in the forward mode as a standard rectifier or reverse mode as a power zener diode and will protect dataaheet mobile transceivers, radios and tape decks from over-voltage conditions. Good performance at D Devices are listed in order of decreasing turn-on time U. Some devices will have only a package option, either plastic “P” suffix or ceramic “L” suffix. Evaluation Module This complete board has all of the M family dovices for ease of parts evaluation.
1N Datasheet PDF –
These devices can also be used for Broadband Datasbeet Power 0. Ceramic packages with a cold sealing process will also be available in quantity orders in the future. Provides excellent performance and simple design for most video and communi- cations purposes.
Butlar MC 1 The MTTL Dl IC family utilizes nichrome resistors, post metalization passivation, monometallic inter- connections, and very small high frequency transistor structures to enhance the radiation resistant qualities of this line. They are heavily gold doped and processed to provide very short switching times and low output capacitance below 6 pF.
1978_Motorola_Power_Device_Data 1978 Motorola Power Device Data
Other types require a sense amplifier dagasheet addition to the drivers. Specifications and performance ot the MPC positive voltage regulator and the MPC negative voltage regulator are nearly identical. However, these memory ICs do not function alone. In this plastic-encapsulated package, which is slightly larger than the small signal case, the collector is mounted on a metal tab that extends out of the case.
The MLM relaxed specification: They emit infrared or visible light when forward biased. For specific options, i.
RAMs which are specifically intended for use with the M Microcomputer Family are shown in another table. To locate the exact page number, see Catalog IndexiPage In silicon rectifiers, for example, peak reverse voltage, and average forward current are the basic criteria, and the devices are satasheet in order of these ratings. Motorola offers the designer a choice of specifically designed integrated circuits for performing phase-locked loop functions, such as, phase detection, frequency fatasheet, filtering, and voltage controlled signal generation.
The following guide is designed to highlight those Motorola operational amplifiers which are recommended for new designs due to their excellent performance, lower relative cost and ready availability. Among these, the following should be given special attention characteristics are given in the indicated section of this Master Selection Guide: Since the devices highlighted here are the most popular in each category, it follows that they are among the most widely available, at the lowest cost.
The following Cross Reference gives you an alphanumeric list of all pro-electron small signal devices, their suggested replacement and the number of the selection table in which the device is further characterized. Output current capability can be increased further through use of one or more external pass transistors. High Input Impedance Comparators. Wide selection of package materials and styles: The devices are listed in decreasing order of V CE0 and l c continuous.
Low Differential Output dc Drift It is a comprehensive listing of the industry’s most complete line of PNP and NPN silicon power transistors, and the devices are rated at currents between mA and 60 amperes, and at voltages up to datawheet.
Current rating up to 50 A.